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STM8S007C8 데이터시트(PDF) 57 Page - STMicroelectronics |
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STM8S007C8 데이터시트(HTML) 57 Page - STMicroelectronics |
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57 / 93 page ![]() DS8633 Rev 6 57/93 STM8S007C8 Electrical characteristics 82 Figure 13. HSE oscillator circuit diagram Table 30. HSE oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE External high speed oscillator frequency -1 - 24 MHz RF Feedback resistor - - 220 - k Ω C(1) Recommended load capacitance (2) -- - 20 pF IDD(HSE) HSE oscillator power consumption C = 20 pF, fOSC = 24 MHz -- 6 (startup) 2 (stabilized)(3) mA C = 10 pF, fOSC = 24 MHz -- 6 (startup) 1.5 (stabilized)(3) gm Oscillator transconductance - 5 - - mA/V tSU(HSE)(4) Startup time VDD is stabilized - 1 - ms 1. C is approximately equivalent to 2 x crystal Cload. 2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small Rm value. Refer to crystal manufacturer for more details 3. Guaranteed by characterization results. 4. tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. OSCOUT OSCIN fHSE to core CL1 RF STM8 Resonator Consumption control gm Rm Cm Lm Resonator CL2 CO MS36490V3 |
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