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STP13N60DM2 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP13N60DM2 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on ) max. ID STP13N60DM2 600 V 0.365 Ω 11 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STP13N60DM2 Product summary Order code STP13N60DM2 Marking 13N60DM2 Package TO-220 Packing Tube N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package STP13N60DM2 Datasheet DS12837 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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