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MIC5209 데이터시트(PDF) 7 Page - Microchip Technology |
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MIC5209 데이터시트(HTML) 7 Page - Microchip Technology |
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7 / 30 page ![]() 2017 - 2022 Microchip Technology Inc. and its subsidiaries DS20005720B-page 7 MIC5209 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Storage Temperature Range TS –65 — +150 °C — Lead Temperature — — — +260 °C Soldering, 5 sec. Junction Temperature TJ –40 — +125 °C 2.5V ≤ VOUT ≤ 15V Junction Temperature TJ 0 — +125 °C 1.8V ≤ VOUT < 2.5V Package Thermal Resistance Thermal Resistance SOT-223 θJA — 62 — °C/W EIA/JEDEC JES51-751-7, 4 Layer Board θJC — 15 — °C/W Thermal Resistance SOIC-8 θJA — 50 — °C/W See Thermal Considerations for more information. θJC — 25 — °C/W Thermal Resistance DDPAK θJA — 31.4 — °C/W EIA/JEDEC JES51-751-7, 4 Layer Board θJC — 3 — °C/W Thermal Resistance 3 mm x 3 mm VDFN θJA — 64 — °C/W EIA/JEDEC JES51-751-7, 4 Layer Board θJC — 12 — °C/W Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. |
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