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MF1P2131DA4/02 데이터시트(PDF) 25 Page - NXP Semiconductors

부품명 MF1P2131DA4/02
상세설명  MIFARE Plus EV1
PDF  33 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

MF1P2131DA4/02 데이터시트(HTML) 25 Page - NXP Semiconductors

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NXP Semiconductors
MF1P(H)x1y1
MIFARE Plus EV1
MF1P(H)x1y1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2019. All rights reserved.
Product short data sheet
Rev. 3.2 — 6 December 2018
COMPANY PUBLIC
366932
25 / 33
10 Limiting values
Stresses above one or more of the limiting values may cause permanent damage to the
device. Exposure to limiting values for extended periods may affect device reliability.
Table 9. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
II
input current
-
50
mA
Ptot/pack
total power dissipation per package
-
200
mW
Tstg
storage temperature
-55
125
°C
Tamb
ambient temperature
-25
70
°C
VESD
electrostatic discharge voltage on LA/LB [1]
-
2
kV
[1]
ANSI/ESDA/JEDEC JS-001; Human body model
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.



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