NTMJS1D4N06CL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

5.3

mV/°C

Drain−to−Source On Resistance

1.45

1.8

mW

1.07

1.3

Forward Transconductance

244

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

7430

pF

Output Capacitance

3500

Reverse Transfer Capacitance

57

Total Gate Charge

47

nC

Total Gate Charge

103

Threshold Gate Charge

10

Gate−to−Source Charge

17

Gate−to−Drain Charge

11

Plateau Voltage

2.6

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

29

ns

Rise Time

21

Turn−Off Delay Time

52

Fall Time

19

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.78

1.2

V

0.66

Reverse Recovery Time

86

ns

Charge Time

58

Discharge Time

28

Reverse Recovery Charge

175

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.