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NTMTS0D4N04CL 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NTMTS0D4N04CL
상세설명  MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A
PDF  7 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NTMTS0D4N04CL 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
8.86
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 32 V
TJ = 25°C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
2.5
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
ID = 250 mA, ref to 25°C
−6.24
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
0.3
0.4
mW
VGS = 4.5 V
ID = 50 A
0.45
0.64
Forward Transconductance
gFS
VDS =5 V, ID = 50 A
330
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 20 V
20600
pF
Output Capacitance
COSS
9500
Reverse Transfer Capacitance
CRSS
390
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
163
nC
Threshold Gate Charge
QG(TH)
VGS = 10 V, VDS = 20 V; ID = 50 A
29.8
nC
Gate−to−Source Charge
QGS
51
Gate−to−Drain Charge
QGD
52.1
Total Gate Charge
QG(TOT)
341
Voltage Plateau
VGP
2.7
V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 6 W
110
ns
Rise Time
tr
147
Turn−Off Delay Time
td(OFF)
217
Fall Time
tf
107
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 6 W
45.6
ns
Rise Time
tr
39.8
Turn−Off Delay Time
td(OFF)
382
Fall Time
tf
96.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.75
1.2
V
TJ = 125°C
0.58
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
117
ns
Charge Time
ta
87
Discharge Time
tb
30
Reverse Recovery Charge
QRR
336
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.



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