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ADM7154ARDZ-1.2-R7 데이터시트(PDF) 20 Page - Analog Devices

부품명 ADM7154ARDZ-1.2-R7
상세설명  600 mA, Ultralow Noise, High PSRR, RF Linear Regulator
PDF  23 Pages
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제조업체  AD [Analog Devices]
홈페이지  http://www.analog.com
Logo AD - Analog Devices

ADM7154ARDZ-1.2-R7 데이터시트(HTML) 20 Page - Analog Devices

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ADM7154
Data Sheet
Rev. B | Page 20 of 23
TOTAL POWER DISSIPATION (W)
1.8
2.0
2.2
2.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
60
70
80
90
100
110
120
130
160
150
140
6400mm2
500mm2
25mm2
TJ MAX
Figure 59. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 50°C
TOTAL POWER DISSIPATION (W)
2.0
1.6
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
65
75
85
95
105
115
125
135
155
145
6400mm2
500mm2
25mm2
TJ MAX
Figure 60. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 85°C
Thermal Characterization Parameter (ΨJB)
When board temperature is known, use the thermal
characterization parameter, ΨJB, to estimate the junction
temperature rise (see Figure 61 and Figure 62). Maximum
junction temperature (TJ) is calculated from the board
temperature (TB) and power dissipation (PD) using the following
formula:
TJ = TB + (PD × ΨJB)
(5)
The typical value of ΨJB is 15.1°C/W for the 8-lead LFCSP
package and 17.9°C/W for the 8-lead SOIC package.
TOTAL POWER DISSIPATION (W)
9.0
8.5
8.0
7.0
6.0
7.5
6.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
160
140
120
100
80
60
40
20
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
Figure 61. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP
TOTAL POWER DISSIPATION (W)
5.5
7.5
7.0
6.5
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
160
140
120
100
80
60
40
20
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
Figure 62. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC



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