SQJ200EP datasheet(2/14 Pages) VISHAY

2 / 14 page

SQJ200EP

www.vishay.com

Vishay Siliconix

S15-2336-Rev. A, 05-Oct-15

Document Number: 67774

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 20 V

N-Ch 1

μA

VGS = 0 V

VDS = 20 V

N-Ch 2

VGS = 0 V

VDS = 20 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 20 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 20 V, TJ = 175 °C

N-Ch 1

150

VGS = 0 V

VDS = 20 V, TJ = 175 °C

N-Ch 2

150

On-State Drain Current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

N-Ch 1

VGS = 10 V

VDS

≥ 5 V

N-Ch 2

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 16 A

N-Ch 1

0.0074

0.0088

VGS = 10 V

ID = 20 A

N-Ch 2

0.0031

0.0037

VGS = 10 V

ID = 16 A, TJ = 125 °C

N-Ch 1

0.0110

VGS = 10 V

ID = 20 A, TJ = 125 °C

N-Ch 2

0.0036

VGS = 10 V

ID = 16 A, TJ = 175 °C

N-Ch 1

0.0124

VGS = 10 V

ID = 20 A, TJ = 175 °C

N-Ch 2

0.0063

VGS = 4.5 V

ID = 14 A

N-Ch 1

0.0095

0.0124

VGS = 4.5 V

ID = 19 A

N-Ch 2

0.0039

0.0050

Forward Transconductance b

gfs

VDS = 10 V, ID = 10 A

N-Ch 1

VDS = 10 V, ID = 10 A

N-Ch 2

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 1

723

975

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 2

1937

2525

Output Capacitance

Coss

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 1

269

675

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 2

655

870

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 1

112

340

VGS = 0 V

VDS = 10 V, f = 1 MHz

N-Ch 2

264

350

Total Gate Charge c

VGS = 10 V

VDS = 10 V, ID = 20 A

N-Ch 1

VGS = 10 V

VDS = 10 V, ID = 60 A

N-Ch 2

Gate-Source Charge c

Qgs

VGS = 10 V

VDS = 10 V, ID = 20 A

N-Ch 1

1.6

VGS = 10 V

VDS = 10 V, ID = 60 A

N-Ch 2

4.1

Gate-Drain Charge c

Qgd

VGS = 10 V

VDS = 10 V, ID = 20 A

N-Ch 1

2.5

VGS = 10 V

VDS = 10 V, ID = 60 A

N-Ch 2

Gate Resistance

f = 1 MHz

N-Ch 1

1.1

2.3

3.5

N-Ch 2

0.4

1.4

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