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Document Number: 73023

S09-1453-Rev. B, 03-Aug-09

Vishay Siliconix

SiP41109, SiP41110

Notes:

a. Device Mounted with all leads soldered or welded to PC board.

b. Derate 7.7 mW/°C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS (all voltages referenced to GND = 0 V)

Parameter

Limit

Unit

- 0.3 to 15

V

BOOT, PHASE

- 0.3 to 55

BOOT to PHASE

- 0.3 to 15

Storage Temperature

- 40 to 150

°C

Operating Junction Temperature

125

SO-8

770

mW

Thermal Impedance (

Θ

b

130

°C/W

RECOMMENDED OPERATING RANGE (all voltages referenced to GND = 0 V)

Parameter

Limit

Unit

10.8 to 13.2

V

48

100 nF to 1 µF

BOOT to PHASE

8V

Operating Temperature Range

- 40 to 85

°C

Parameter

Symbol

Test Conditions Unless Specified

Limits

Unit

Power Supplies

Supply Voltage

10.8

13.2

V

Quiescent Current

PWM non-switching

5.6

9.5

mA

Supply Current

SiP41109

12.5

SiP41110

11.0

Tristate (Shutdown) Current

PWM = open

850

1200

µA

Reference Voltage

Break-Before-Make

2.5

V

PWM Input

Input High

4.0

V

Input Low

1.0

Bias Current

PWM 5 V or 0 V

± 600

± 1000

µA

Tristate Threshold

High

3.0

V

Low

2.0

240

ns

Bootstrap Diode

Forward Voltage

0.70

0.85

1.0

V