SISF00DN datasheet(2/9 Pages) VISHAY

2 / 9 page

SiSF00DN

www.vishay.com

Vishay Siliconix

S20-0868-Rev. B, 09-Nov-2020

Document Number: 75573

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

c. On single MOSFET



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-source threshold voltage

VGS(th)

VS1S2 = VGS, ID = 250 μA

2.1

Gate-source leakage

IGSS

VS1S2 = 0 V, VGS = +20 / -16 V

100

Zero gate voltage drain current

IDSS

VS1S2 = 30 V, VGS = 0 V

μA

VS1S2 = 30 V, VGS = 0 V, TJ = 70 °C

On-state drain current a

IS1S2(on)

VS1S2  10 V, VGS = 10 V

Drain-source on-state resistance a

RS1S2(on)

VGS = 10 V, IS1S2 = 10 A

0.0042

0.0050



VGS = 4.5 V, IS1S2 = 5 A

0.0056

0.0070

Forward transconductance a

gfs

VS1S2 = 15 V, IS1S2 = 20 A

130

Dynamic b, c

Input capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2700

Output capacitance

Coss

865

Reverse transfer capacitance

Crss

-51

Total gate charge

VDS = 15 V, VGS = 10 V, ID =10 A

-35

VDS = 15 V, VGS = 4.5 V, ID = 10 A

16.1

24.2

Gate-source charge

Qgs

-7

Gate-drain charge

Qgd

-2.5

Gate resistance

f = 1 MHz

0.3

1.5



Turn-on delay time

td(on)

VDD = 15 V, RL = 1 , IS1S2  10 A,

VGEN = 10 V, Rg = 1 

-10

Rise time

-32

Turn-off delay time

td(off)

-22

Fall time

-10

Turn-on delay time

td(on)

VDD = 15 V, RL = 1 , ID  10 A,

VGEN = 4.5 V, Rg = 1 

-21

Rise time

120

Turn-off delay time

td(off)

-25

Fall time

-15

Drain-Source Body Diode Characteristics c

Continuous source-drain diode current

IS1S2

TC = 25 °C

Pulse diode forward current

IS1S2M

120

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs,

TJ = 25 °C

-42

Body diode reverse recovery charge

Qrr

-42

Reverse recovery fall time

-23

Reverse recovery rise time

-19

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