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SIP12107 데이터시트(PDF) 13 Page - Vishay Siliconix |
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SIP12107 데이터시트(HTML) 13 Page - Vishay Siliconix |
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13 / 20 page ![]() SiP12107 www.vishay.com Vishay Siliconix S20-0484-Rev. C, 29-Jun-2020 13 Document Number: 63395 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power-Saving Mode Operation To further improve efficiency at light-load condition, SiP12107 provides a set of innovative implementations to eliminate LS recirculating current and switching losses. The internal zero crossing detector (ZCD) monitors LX node voltage to determine when inductor current starts to flow negatively. In power saving mode (PSM), as soon as inductor valley current crosses zero, the device first deploys diode emulation mode by turning off LS FET. If load further decreases, switching frequency is further reduced proportional to load condition to save switching losses while keeping output ripple within tolerance. The switching frequency is set by the controller to maintain regulation. At zero load this frequency can go as low as hundreds of Hz. Whenever fixed frequency PWM operation is required over the entire load span, power saving mode feature can be disabled by connecting AUTO pin to VIN or AVIN. OUTPUT MONITORING AND PROTECTION FEATURES Output Over-Current Protection (OCP) SiP12107 has pulse-by-pulse over-current limit control. The inductor valley current is monitored during LS FET turn-on period through RDS(on) sensing. After a pre-defined time, the valley current is compared with internal threshold (5 A typ.) to determine the threshold for OCP. If monitored current is higher than threshold, HS turn-on pulse is skipped and LS FET is kept on until the valley current returns below OCP limit. In the severe over-current condition, pulse-by-pulse current limit eventually triggers output under-voltage protection (UVP), which latches the device off to prevent catastrophic thermal-related failure. UVP is described in the next section. OCP is enabled immediately after AVIN passes UVLO level. Figure 6 illustrates the OCP operation. Fig. 6 - Over-Current Protection Illustration Output Under-Voltage Protection (UVP) UVP is implemented by monitoring output through VFB pin. Once the voltage level at VFB is below 0.45 V for more than 20 μs, then UVP event is recognized and both HS and LS MOSFETs are turned off. UVP latches the device off until either AVIN or EN is recycled. UVP is only active after the completion of soft-start sequence. Output Over-Voltage Protection (OVP) For OVP implementation, output is monitored through FB pin. After soft-start, if the voltage level at FB is above 20 % (typ.), OVP is triggered with HS FET turning off and LS FET turning on immediately to discharge the output. Normal operation is resumed once FB voltage drops back to 0.6 V. OVP is active immediately after AVIN passes UVLO level. Over-Temperature Protection (OTP) SiP12017 has internal thermal monitor block that turns off both HS and LS FETs when junction temperature is above 160 °C (typ.). A hysteresis of 30 °C is implemented, so when junction temperature drops below 130 °C, the device restarts by initiating the soft-start sequence again. Soft Startup SiP12107 deploys an internally regulated soft-start sequence to realize a monotonic startup ramp without any output overshoot. Once AVIN is above UVLO level (2.55 V typ.). Both the reference and VOUT will ramp up slowly to regulation in 1 ms (typ.) with the reference going from 0 V to 0.6 V and VOUT rising monotonically to the programmed output voltage. During soft-start period, OCP is activated. OVP and short-circuit protection are not active until soft-start is complete. Iload OCPthreshold Iinductor GH Skipped GH pulse |
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