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SIP32452 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SIP32452 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 12 page ![]() SiP32451, SiP32452, SiP32453 www.vishay.com Vishay Siliconix S20-0528-Rev. E, 06-Jul-2020 2 Document Number: 63315 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Device mounted with all leads and power pad soldered or welded to PC board b. Derate 3.6 mW/°C above TA = 70 °C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT Supply input voltage (VIN) -0.3 to +2.75 V Enable input voltage (VEN) -0.3 to +2.75 Output voltage (VOUT) -0.3 to +2.75 Maximum continuous switch current (Imax.)1.2 A Maximum pulsed current (IDM) VIN (pulsed at 1 ms, 10 % duty cycle) 2 ESD rating (HBM) 4000 V Junction temperature (TJ) -40 to +150 °C Thermal resistance ( JA) a 280 °C/W Power dissipation (PD) a 196 mW RECOMMENDED OPERATING RANGE PARAMETER LIMIT UNIT Input voltage range (VIN) 0.9 to 2.5 V Operating junction temperature range -40 to +125 °C SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS SPECIFIED VIN = 1 V, TA = -40 °C to +85 °C (typical values are at TA = 25 °C) LIMITS UNIT MIN. a TYP. b MAX. a Operating voltage c VIN 0.9 - 2.5 V Quiescent current IQ VIN = 1.2 V, VEN = VIN, OUT = open - 10 15 μA VIN = 2.5 V, VEN = VIN, OUT = open - 34 60 Off supply current IQ(off) SiP32451 EN = GND, OUT = open -- 30 SiP32452, SiP32453 - - 1 Off switch current IDS(off) EN = GND, OUT = 0 V - - 30 Reverse blocking current IRB VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V - 0.001 10 On-resistance RDS(on) VIN = 1 V, IL = 200 mA, TA = 25 °C - 56 65 m VIN = 1.2 V, IL = 200 mA, TA = 25 °C - 55 65 VIN = 1.8 V, IL = 200 mA, TA = 25 °C - 54 65 VIN = 2.5 V, IL = 200 mA, TA = 25 °C - 54 65 On-resistance temp. coefficient TCRDS - 3900 - ppm/°C Output pull-down resistance RPD VEN = 0 V, TA = 25 °C (SiP32451 only) - 425 550 EN input low voltage c VIL VIN = 1 V - - 0.1 V EN input high voltage c VIH VIN = 2.5 V 1.5 - - EN input leakage IEN VIN = 2.5 V, VEN = 0 V - - 1 μA VIN = 2.5 V, VEN = 2.5 V - 10 15 |
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