Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.

Military grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2 and 3.

Subgroups 5 and 6 testing available upon request.

Subgroup 1, 4 TA=TC=+25°C

2, 5 TA=TC=+125°C

3, 6 TA=TC=-55°C

Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.

OUTPUT CHARACTERISTICS

Leakage Current (Each MOSFET)

Reverse Recovery Time

BIAS SUPPLY CHARACTERISTICS

+Vcc Bias Current

+VB Bias Current

INPUT SIGNAL CHARACTERISTICS

Positive Trigger Threshold Voltage

Negative Trigger Threshold Voltage

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK 4303

MSK 4303H/E

Junction Temperature

2

ABSOLUTE MAXIMUM RATINGS

High Voltage Supply

Logic Supply

Continuous Output Current

Peak Output Current

Thermal Resistance @ 125°C

(Output Switches)(Junction to Case)

ELECTRICAL SPECIFICATIONS

Parameters

MSK 4303H/E

Min.

Typ.

Max.

Ic=10A

Ic=10A

V+ = 75V

V+ = 75V

V+ = 75V

+Vcc=15V

+Vcc=15V

+Vcc=15V

+Vcc Positive Going Threshold

+Vcc Negative Going Threshold

Low Side Turn-off to High Side Turn-On

High Side Turn-off to Low Side Turn-On

-

-

-

-

-

-

-

-

-

-

-

-

2.7

-

8.0

7.4

280

4

0.013

0.026

0.013

1.2

1.5

1.0

25

250

25

-

20

9

-

0.8

9.8

9.0

520

6

-

-

-

-

-

-

-

-

-

-

-

-

2.7

-

8.0

7.4

280

4

-

-

-

0.56

-

-

1

-

-

120

12

6

-

-

8.9

8.2

400

5

0.013

-

-

1.4

-

-

25

-

-

-

20

9

-

0.8

9.8

9.0

520

6

MSK 4303

Min.

Typ. Max.

1

2

3

1

2

3

1

2

3

-

1,2,3

1,2,3

-

-

1,2,3

1,2,3

-

-

-

-

-

0.56

0.78

0.42

1

10

1

120

12

6

-

-

8.9

8.2

400

5

Ω

Ω

Ω

volts

volts

volts

µA

mA

mA

nS

mA

mA

volts

volts

volts

volts

nSEC

µSEC

3

GROUP A

SUBGROUP

5

Test Conditions

NOTES:

1

-65° to +150°C

300°C

-40°C to +85°C

-55°C to +125°C

+150°C

TsT

TLD

TC

TJ

V+

75V

18V

10A

14A

1.5°C/W

UNITS

2

Under-voltage Lockout

Dead Time

Drain-Source ON Resistance

(each MOSFET) (for thermal calculations only)

Drain-Source Voltage (VDS(on))

(each MOSFET)

1

Rev. B

11/05

1

2

3

4

5

6

6

1

1

1