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STR730FZ2H7 데이터시트(PDF) 21 Page - STMicroelectronics

부품명 STR730FZ2H7
상세설명  ARM7TDMI-TM 32-bit MCU with Flash, 3X CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces
PDF  40 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STR730FZ2H7 데이터시트(HTML) 21 Page - STMicroelectronics

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STR73xF
Electrical characteristics
21/40
3
Electrical characteristics
This product contains devices to protect the inputs against damage due to high static
voltages, however it is advisable to take normal precautions to avoid application of any
voltage higher than the specified maximum rated voltages.
For proper operation it is recommended that VIN be higher than VSS and lower than VDD.
Reliability is enhanced if unused inputs are connected to an appropriate logic voltage level
(VDD or VSS).
Caution:
All values indicated in this section are preliminary and to be confirmed by product
characterization.
3.1
Absolute maximum ratings
Stresses exceeding the recommended “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (VIN>VDD or VIN<VSS) the
voltage on pins with respect to ground (VSS) must not exceed the recommended values.
1.
In 144-pin devices, only +10mA on P0.3, P1.13, P3.6 and P4.13 pins (negative injection not allowed).
Table 4.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDD
Voltage on VDD pins with respect to ground (VSS)
–0.3 to +6.0
V
VSSA
Voltage on VSSA pin with respect to ground (VSS)VSS
V
VDDA
Voltage on VDDA pin with respect to ground (VSS)
–0.3 to VDD + 0.3
V
VIN
Voltage on any pin with respect to ground (VSS)
–0.3 to VDD + 0.3
V
IINJ
Input current on any pin during overload condition
±101)
mA
Absolute sum of all input currents during overload
condition
±75
mA
TST
Storage temperature
–55 to +150
°C
ESD
ESD Susceptibility (Human Body Model)
2000
V



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