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ADRF5474BCZ 데이터시트(PDF) 4 Page - Analog Devices

부품명 ADRF5474BCZ
상세설명  Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz
PDF  14 Pages
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제조업체  AD [Analog Devices]
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ADRF5474BCZ 데이터시트(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5474
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 14
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
Third-Order Intercept (IP3)
Two-tone PIN = 12 dBm per tone, Δf = 1 MHz, all
attenuation states
45
dBm
DIGITAL CONTROL INPUTS
LE, D2, D3, D4, and D5
Voltage
Low (VINL)
0
0.8
V
High (VINH)
1.2
3.3
V
Current
Low (IINL)
–10
µA
High (IINH)
<1
µA
SUPPLY CURRENT
Positive Supply Current
Bias Low
LE, D2, D3, D4, and D5 = 0 V
52
µA
Bias High
LE, D2, D3, D4, and D5 = 3.3 V
2
µA
Negative Supply Current
–110
μA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
Positive (VDD)
3.15
3.45
V
Negative (VSS)
−3.45
−3.15
V
Digital Control Voltage
0
VDD
V
RF Power Handling 2
Frequency = 100 MHz to 50 GHz, TDIE3 = 85°C,4 all
attenuation states
Input at ATTIN
Steady state, average
23
dBm
Steady state, peak
24
dBm
Hot switching, average
23
dBm
Hot switching, peak
24
dBm
Input at ATTOUT
Steady state, average
15
dBm
Steady state, peak
16
dBm
Hot switching, average
15
dBm
Hot switching, peak
16
dBm
TDIE3
−40
+105
°C
1 Input linearity performance degrades over frequency, see Figure 19 and Figure 22.
2 For power derating over frequency, see Figure 2 to Figure 3. Applicable for all ATTIN and ATTOUT power specifications.
3 TDIE refers to the bottom of the die on carrier.
4 For 105°C operation, the power handling degrades from the TDIE = 85°C specifications by 3 dB.
TIMING SPECIFICATIONS
See Figure 24 for the timing diagrams.
Table 2.
Parameter
Description
Min
Typ
Max
Unit
tLEW
Minimum LE pulse width, see Figure 24
10
ns
tPH
Hold time, see Figure 24
10
ns
tPS
Setup time, see Figure 24
2
ns



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