1

Schottky Barrier Diodes (SBD)

MA2C723

Silicon epitaxial planar type

For super-high speed switching circuit

For small current rectification

I Features

• Allowing to rectify under (I

• Sealed in DO-34 (DHD) package

• Allowing high-density mounting (5 mm pitch insertion)

• High reliability

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Non-repetitive peak forward

1.5

A

Peak forward current

300

mA

Forward current (DC)

200

mA

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

50

µA

Forward voltage (DC)

0.55

V

Terminal capacitance

30

pF

3.0

ns

I Electrical Characteristics T

a

= 25°C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Rated input/output frequency: 1 000 MHz

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)

1 : Casthode

2 : Anode

JEDEC : DO-34

Color band in pink

I Cathode Indication

φ 0.45 max.

φ 1.75 max.

COLORED BAND

INDICATES

CATHODE

2

1

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A