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3DD155 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 3DD155
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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1
isc Silicon NPN Power Transistor
3DD155
DESCRIPTION
·
DC Current Gain
: hFE= 15-120@IC= 1A
·
Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5.0
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
A
80
V
B
150
C
200
D
250
E
350
F
400
VCEO
Collector-Emitter Voltage
A
50
V
B
100
C
150
D
200
E
250
F
300
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Power Dissipation
@TC=75℃
20
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃


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