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SMS47 데이터시트(PDF) 4 Page - Summit Microelectronics, Inc. |
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SMS47 데이터시트(HTML) 4 Page - Summit Microelectronics, Inc. |
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4 / 19 page ![]() 4 SMS47 2087 1.1 04/11/05 SUMMIT MICROELECTRONICS, Inc. Preliminary Information *Note - Stresses beyond the listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Temperature Under Bias ...................... –55°C to 125°C Storage Temperature ............................. –65°C to 150°C Lead Solder Temperature (10s) ........................... 300 °C Terminal Voltage with Respect to GND: V0, V1, V2, and V3 ......... –0.3V to 6.0V All Others ....................... –0.3V to 6.0V Junction Temperature.......................…….....…...150°C ESD Rating per JEDEC……………………..….…..2000V Latch-Up testing per JEDEC………..…….......…±100mA DC OPERATING CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS* RECOMMENDED OPERATING CONDITIONS (Over Recommended Operating Conditions; Voltages are relative to GND) Industrial Temperature Range............... –40ºC to +85ºC. Commercial Temperature Range..............–5ºC to +70ºC. VSUPPLY Supply Voltage............................2.7V to 5.5V VSUPPLY = Device supply voltage provided by the highest VX input. Package Thermal Resistance ( θJA) 16 Lead SSOP…………………….………….…23oC/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 l o b m y Sr e t e m a r a Ps e t o N. n i M. p y T. x a Mti n U V Y L P P U S e g a tl o v y l p p u s g n it a r e p O -t u o t e s e r d il a v a o t s r e f e r . n i M V 1 d e t a r e n e g g n i e b t u p 0 . 15 . 5V t a : s n o it a r e p o e ti r W / d a e R V e h t f o e n o t s a e l X e b t s u m s t u p n i V e v o b a r o t a Y L P P U S . n i m 7 . 25 . 5V I C C t n e r r u c y l p p u S V ; V 5 . 5 = P A C _ D D V 0 V ; V 7 . 4 t n i o p p ir t 1 V , 2, V 3 V = # R M ; D N G = C C s t u p t u o ll a ; g n it a o lf 0 0 20 0 4A µ s s e c c a r e t s i g e r n o it a r u g if n o C3 A m V H T P e g n a R d l o h s e r h t e l b a m m a r g o r P ) e g n a r w o l( e g n a r V e g n a r e g a tl o v d l o h s e r h t t e s e R 0 V o t 3 ) s t n e m e r c n i V m 5 ( 6 . 05 7 8 . 1V V H T P e g n a R d l o h s e r h t e l b a m m a r g o r P ) e g n a r h g i h ( e g n a r V e g n a r e g a tl o v d l o h s e r h t t e s e R 0 V o t 3 ) s t n e m e r c n i V m 5 1 ( 8 . 15 2 6 . 5V V C C A H T P d l o h s e r h t e l b a m m a r g o r P y c a r u c c A V H T P d l o h s e r h t d e m m a r g o r p e h t s i V e h t n i h ti w t n i o p t e s H T P e g n a R 0 . 1 –V H T P 0 . 1% V T S Y H V T S R s i s e r e t s y hw o l e b 1 e t o N e e S0 3V m V L O t u p t u o e g a tl o v w o L I K N I S V , A m 1 = P A C _ D D V ≥ V 7 . 23 . 0V I K N I S V , A µ 0 0 2 = P A C _ D D V V 0 . 1 =3 . 0V V L I d l o h s e r h t t u p n I 6 . 0V V H I 7 . 0´ V C C V RELIABILITY CHARACTERISTICS Data Retention………………….…………..…..100 Years Endurance……………………….…..…….100,000 Cycles Note 1: Low Range Hysteresis = 4.2 X (Vtrip - 0.5 volts) mV. For Vtrip = 1.0 volts, Hysteresis = 2.1 mV (0.21 %), High Range Hysteresis = 12.6 X (Vtrip -0.5 volts) mV. For Vtrip = 5.0 volts, Hysteresis = 56.7 mV (1.13%). |
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