ART2K0FE datasheet(6/18 Pages) AMPLEON

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ART2K0FE_2K0FES_2K0FEG

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Product data sheet

Rev. 4 — 22 March 2022

6 of 18

ART2K0FE(S)(G)

Power LDMOS transistor

Test information

7.1 Ruggedness in class-AB operation

The ART2K0FE, ART2K0FES and ART2K0FEG are capable of withstanding a load

mismatch corresponding to VSWR

 65 : 1 through all phases under the following

conditions: VDS =65V; IDq = 100 mA per section; PL = 2000 W pulsed; tp =100 s;

 =10%; f=108MHz.

7.2 Impedance information

Table 8.

RF characteristics

Test signal: pulsed RF; tp =100 s;  = 5 %; f = 108 MHz; RF performance at VDS =65 V;

IDq = 50 mA per section; Tcase =25 C; unless otherwise specified; in a class-AB production test

circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 2000 W

27.0

28.4

RLin

input return loss

PL = 2000 W

13.9



drain efficiency

PL = 2000 W

69.0

72.1

Fig 3.

Definition of transistor impedance

Table 9.

Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 65 V and PL =2000W.

(MHz)

(

)

(

)

108

2.4

 j8.7

3.8 + j1.0

amp01314

gate 1

gate 2

drain 2

drain 1

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