ART1K6FHSU datasheet(1/18 Pages) AMPLEON

부품명	ART1K6FHSU

상세설명	Power LDMOS transistor

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제조업체	AMPLEON [Ampleon Netherlands B.V.]

홈페이지	https://www.ampleon.com

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1.

Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor

has been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

[1]

Production circuit: tp = 100 s;  = 10 %.

[2]

Application circuit: tp = 100 s;  = 10 %.

1.2 Features and benefits

 High breakdown voltage enables class E operation at VDS =48 V

 Suitable for VDS = 50 and 55 V

 Qualified up to a maximum of VDS =55V

 Characterized from 30 V to 55 V for extended power range

 Easy power control

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

ART1K6FH; ART1K6FHS;

ART1K6FHG

Power LDMOS transistor

Rev. 2 — 22 March 2022

Product data sheet

Table 1.

Application information

Test signal

f

VDS

PL

Gp



D

(MHz)

(V)

(W)

(dB)

(%)

CW pulsed [1]

108

50

1400

28.7

77.3

CW pulsed [1]

108

55

1600

29.5

76.0

CW pulsed [2]

352

50

1200

20.0

68.0

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ART1K6FHSU 데이터시트(PDF) 1 Page - Ampleon Netherlands B.V.

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