ART2K0FESU datasheet(1/18 Pages) AMPLEON

부품명	ART2K0FESU

상세설명	Power LDMOS transistor

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제조업체	AMPLEON [Ampleon Netherlands B.V.]

홈페이지	https://www.ampleon.com

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1.

Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor

has been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

[1]

tp =10 s;  = 10 %.

[2]

Center band performance numbers across the indicated frequency range.

[3]

Typical performance numbers across the indicated frequency range.

[4]

Symmetric Ultra Wideband Doherty.

1.2 Features and benefits

 High breakdown voltage enables class E operation up to VDS =53V

 Qualified up to a maximum of VDS =65V

 Characterized from 30 V to 65 V to support a wide range of applications

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

ART2K0FE; ART2K0FES;

ART2K0FEG

Power LDMOS transistor

Rev. 4 — 22 March 2022

Product data sheet

Table 1.

Application information

Test signal

f

VDS

PL

Gp



D

(MHz)

(V)

(W)

(dB)

(%)

CW

41.0

65

1600

29.0

79

CW

60.0

65

1750

26.8

80

CW pulsed [1]

64.0

63

2180

27.5

78

CW [2]

87.5 to 108

60

1650

26

83.5

DVB-T [3][4]

170 to 240

63

250

21

48

CW

352

65

1500

19

74

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ART2K0FESU 데이터시트(PDF) 1 Page - Ampleon Netherlands B.V.

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