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BLF573 데이터시트(PDF) 4 Page - Ampleon Netherlands B.V. |
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BLF573 데이터시트(HTML) 4 Page - Ampleon Netherlands B.V. |
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4 / 16 page ![]() BLF573_BLF573S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 4 of 16 BLF573; BLF573S HF / VHF power LDMOS transistor 6.1 Ruggedness in class-AB operation The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS =50V; IDq =900 mA; PL = 300 W; f = 225 MHz. 7. Application information 7.1 Impedance information VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching VDS (V) 050 40 20 30 10 001aaj141 400 200 600 800 Coss (pF) 0 Table 8. Typical impedance Measured ZS and ZL test circuit impedances. f ZS ZL MHz 225 0.7 + j2.0 1.95 + j2.0 Fig 2. Definition of transistor impedance 001aaf059 drain ZL ZS gate |
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