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3510-S08-R 데이터시트(PDF) 4 Page - Unisonic Technologies |
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3510-S08-R 데이터시트(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page ![]() 3510 CMOS IC UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R502-048,B ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Supply Voltage VDD 16 V FPO 16 Output Voltage PGO VOUT 8 V All Other Pins -0.3 ~ 16 V DIP-8 1092 Power Dissipation (Ta ≤25°C) SOP-8 PD 730 mWV Operating Temperature TOPR -20 ~ +85 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. The device could be damaged beyond Absolute maximum ratings. 2. The device is guaranteed to meet performance specifications within 0 ~ ℃ +70 operating ℃ temperature range and assured by design from -20 ~ ℃ +85 . ℃ RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP MAX UNIT Supply Voltage VDD 4 15 V PSON, VS5, VS33 7 Input Voltage PGI VIN VDD+0.3V 7 V FPO 15 Output Voltage PGO VOUT 7 V FPO 20 Output Sink Current PGO IO(SINK) 10 mA Supply Voltage Rising Time (See Note) 1 ms Note: VDD rising and falling slew rate must be less than 14V/ms. ELECTRICAL CHARACTERISTICS (T a=25°C ,unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OVER-VOLTAGE PROTECTION VS33 3.7 3.9 4.1 VS5 5.7 6.1 6.5 Over Voltage Threshold VDD 13.2 13.8 14.4 V Low-level Output Voltage (FPO) VOL VDD =5V, IO(SINK) =20mA 0.7 V Leakage Current (FPO) ILEAK V(FPO) =5V 5 µA Noise Deglitch Time OVP VDD =5V 35 73 110 µS PGI AND PGO VPGI 1.1 1.15 1.2 Input threshold Voltage PGI VPG2 0.9 0.95 1 V VS33 2 2.2 2.4 Under Voltage Threshold VS5 VIT 3.3 3.5 3.7 V Low-level Output Voltage (PGO) VOL VDD =4V, IO(SINK) =10 mA 0.4 V Leakage Current (PGO) ILEAK PGO = 5 V 5 µA Short-Circuit Protection Delay 3.3V, 5V 49 75 114 ms 200 300 450 Transient Delay time PGI to PGO PGI to FPO tDLY1 VDD = 5 V 3.2 4.8 7.2 ms 88 150 225 180 296 445 Noise Deglitch Time PGI to PGO PGI to FPO UVP to FPO VDD = 5 V 82 146 220 µs |
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