BLF2425M7LS250P datasheet(4/11 Pages) AMPLEON

부품명	BLF2425M7LS250P

상세설명	Power LDMOS transistor

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제조업체	AMPLEON [Ampleon Netherlands B.V.]

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BLF2425M7L250P_2425M7LS250P#5

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Product data sheet

Rev. 5 — 1 September 2015

4 of 11

BLF2425M7L(S)250P

Power LDMOS transistor

7.2 Impedance information

7.3 Test circuit

Table 8.

Typical impedance

Measured load-pull data half device. Typical values unless otherwise specified. IDq =20mA;

VDS =28V.

ZS and ZL defined in Figure 1.

(MHz)

(

)

(

)

2400

2.3

 6.3j

3.8

 2.7j

2450

3.3

 6.0j

2.5

 2.9j

2500

4.1

 6.0j

3.3

 2.3j

Fig 1.

Definition of transistor impedance

001aak544

gate 1

gate 2

drain 2

drain 1

Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.76 mm.

See Table 9 for list of components.

Fig 2.

Component layout for test circuit

C19

C10

C12

C16

C17

C18

C11

C14

C13

C15

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