1. Product profile

1.1 General description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

[1]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[2]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits



Excellent ruggedness





High power gain



High efficiency



Designed for broadband operation (470 MHz to 860 MHz)



Internal input matching for high gain and optimum broadband operation



Excellent reliability



Easy power control



Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications



Communication transmitter applications in the UHF band



Industrial applications in the UHF band

BLF884P; BLF884PS

UHF power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

Table 1.

Application information

Mode of operation

f

PAR

(MHz)

(W)

(W)

(dB) (%) (dBc) (dBc)

(dB)

RF performance in a common source 860 MHz narrowband test circuit

2-tone, class-AB

150

-

21

46

32

-

-

DVB-T (8k OFDM)

858

70

-

21

33

-

31[1]

8.2 [2]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM)

858

70

-

20

32

-

32 [1]

8.0 [2]