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BLP5LA55SXY 데이터시트(PDF) 13 Page - Ampleon Netherlands B.V. |
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BLP5LA55SXY 데이터시트(HTML) 13 Page - Ampleon Netherlands B.V. |
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13 / 20 page ![]() BLP5LA55S All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2021. All rights reserved. Product data sheet Rev. 3 — 16 July 2021 13 of 20 BLP5LA55S Power LDMOS transistor 7.3.4 1-Tone CW measurements (f = 520 MHz) VDS = 13.6 V; IDq = 80 mA. (1) f = 380 MHz (2) f = 400 MHz (3) f = 410 MHz (4) f = 420 MHz (5) f = 430 MHz (6) f = 450 MHz VDS = 13.6 V; IDq = 80 mA. (1) f = 380 MHz (2) f = 400 MHz (3) f = 410 MHz (4) f = 420 MHz (5) f = 430 MHz (6) f = 450 MHz Fig 13. Power gain as a function of output power; typical values Fig 14. Output power as a function of input power; typical values amp01407 0 20 40 60 80 100 17 19 21 23 25 PL (W) Gp Gp (dB) (dB) (dB) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) amp01408 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 30 50 70 90 Pi (W) PL PL (W) (W) (W) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) VDS = 13.6 V; IDq = 100 mA. VDS = 13.6 V; IDq = 100 mA. Fig 15. Drain efficiency as a function of output power; typical values Fig 16. Power gain as a function of output power; typical values amp01409 15 25 35 45 55 65 40 50 60 70 80 PL (W) ηD ηD (%) (%) (%) amp01410 15 25 35 45 55 65 18 19 20 21 22 PL (W) Gp Gp (dB) (dB) (dB) |
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