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BAS40L 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 BAS40L
상세설명  Small Signal Schottky Diode
PDF  5 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS40L 데이터시트(HTML) 2 Page - Vishay Siliconix

  BAS40L Datasheet HTML 1Page - Vishay Siliconix BAS40L Datasheet HTML 2Page - Vishay Siliconix BAS40L Datasheet HTML 3Page - Vishay Siliconix BAS40L Datasheet HTML 4Page - Vishay Siliconix BAS40L Datasheet HTML 5Page - Vishay Siliconix  
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BAS40L
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 03-Dec-2021
2
Document Number: 86189
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Capacitance vs. Reverse Voltage
Fig. 2 - Typical Forward Voltage vs. Forward Current
Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Leakage current
VR = 40 V, Tj = 25 °C
IR
10
μA
VR = 30 V, Tj = 150 °C
200
μA
VR = 40 V, Tj = 150 °C
500
μA
Forward voltage
IF = 1 mA
VF
400
mV
IF = 10 mA
560
mV
IF = 40 mA
1000
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
2.9
pF
10
100
1000
10000
0
0.5
1
1.5
2
2.5
3
3.5
4
010
20
30
40
Axis Title
VR (V)
f = 1 MHz
10
100
1000
10000
0
0.5
1.0
1.5
0.001
0.01
0.1
1
10
100
1000
Axis Title
IF (mA)
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = -40 °C
10
100
1000
10000
0.01
0.1
1
10
100
1000
10
15
20
25
30
35
40
Axis Title
VR (V)
TJ = 150 °C
125 °C
25 °C



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