STK800 datasheet(4/12 Pages) STMICROELECTRONICS

부품명	STK800

상세설명	N-channel 30V - 0.006??- 20A - PolarPAK-R STripFET-TM Power MOSFET

PDF	12 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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4 / 12 page

Electrical characteristics

STK800

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 10A

VGS= 4.5V, ID= 10A

0.006

0.0075

0.0078

0.0098

Ω

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 10 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

1380

450

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID = 20A

VGS =4.5V

(see Figure 14)

13.4

3.4

4.5

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