BLP2425M10S250P

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© Ampleon Netherlands B.V. 2020. All rights reserved.

Product data sheet

Rev. 1 — 26 March 2020

4 of 11

BLP2425M10S250P

Power LDMOS transistor

7.3 Test circuit

Fig 1.

Definition of transistor impedance

amp01312

gate

drain

Printed-Circuit Board (PCB): Rogers TC350; thickness = 0.762 mm.

See Table 9 for a list of components.

Fig 2.

Component layout demo circuit

Table 9.

List of components

See Figure 2 for component layout.

Component Description

Value

Remarks

C1, C2

multilayer ceramic chip capacitor 22 pF

ATC 800A

C3, C6

multilayer ceramic chip capacitor 1000 pF, 50 V

C0805

C4, C8

multilayer ceramic chip capacitor 1

F, 50 V

C1206

C5, C10

multilayer ceramic chip capacitor 22 pF

ATC 800B

C7

multilayer ceramic chip capacitor 560 pF

ATC 100B

C9

electrolytic capacitor

100

F, 63 V

L1

ferrite bead inductor

47

, 100 MHz

Fair-Rite: 2743019447

L2

inductor

0.05

H

Coilcraft: SLC7530D-500MLC

R1

chip resistor

100



R0805

R2

chip resistor

10



R0805

R3

chip resistor

1.5



R1206

R4

chip resistor

10



R1206

C9

C8

R1

C5

C6

C4

R2

C2

C3

L1

C7 R3

C10

C1

L2

60 mm

90 mm

amp00958

R4