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NVMJS1D2N04CL 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NVMJS1D2N04CL
상세설명  MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A
PDF  7 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NVMJS1D2N04CL 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
20
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 170 mA
1.2
2.0
V
Threshold Temperature Coefficient
VGS(TH)/TJ
−5.9
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V
ID = 50 A
1.5
1.8
mW
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
1.0
1.2
mW
Forward Transconductance
gFS
VDS = 10 V, ID = 50 A
190
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
5600
pF
Output Capacitance
COSS
2600
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 32 V; ID = 50 A
44
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 32 V; ID = 50 A
93
nC
Threshold Gate Charge
QG(TH)
VGS = 10 V, VDS = 32 V; ID = 50 A
9.4
Gate−to−Source Charge
QGS
17.2
Gate−to−Drain Charge
QGD
13.6
Plateau Voltage
VGP
3.1
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 32 V,
ID = 50 A, RG = 2.5 W
24
ns
Rise Time
tr
72
Turn−Off Delay Time
td(OFF)
122
Fall Time
tf
116
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.76
1.2
V
TJ = 125°C
0.66
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
59
ns
Charge Time
ta
29
Discharge Time
tb
30
Reverse Recovery Charge
QRR
43
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



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