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NVMJS1D4N06CL 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 NVMJS1D4N06CL
상세설명  MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A
PDF  7 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NVMJS1D4N06CL 데이터시트(HTML) 4 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
60
40
20
0
10
100
1K
90
70
50
40
20
10
0
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10
0
1
10
0.9
0.8
1.0
0.7
0.6
0.5
0.4
0.3
0.001
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
1000
10
1
0.1
0.1
10
100
1000
1
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 48 V
ID = 50 A
TJ = 25°C
QGS
QGD
VGS = 4.5 V
VDS = 48 V
ID = 50 A
td(off)
td(on)
tf
tr
VGS = 0 V
TJ = 25°C
TJ = −55°C
TJ(initial) = 100°C
TJ(initial) = 25°C
0.01
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms
10 ms
Single Pulse
TC = 25°C
VGS ≤ 10 V
0.001
1000
50
30
10
10K
30
60
TJ = 125°C
10
100
80
100
0.0001
100
1
1
3
5
7
9
100
1000
20
30
40
50
60
1.1 1.2
0.2
0.1
0.01
0.1
1
100
1000



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