NVMJS1D6N06CL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

11

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

−5.2

mV/°C

Drain−to−Source On Resistance

1.13

1.36

mW

1.65

2.30

Forward Transconductance

151

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

6660

pF

Output Capacitance

2953

Reverse Transfer Capacitance

45

Total Gate Charge

41

nC

Total Gate Charge

91

Threshold Gate Charge

5

Gate−to−Source Charge

17.1

Gate−to−Drain Charge

10.9

Plateau Voltage

2.9

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

19

ns

Rise Time

51

Turn−Off Delay Time

47

Fall Time

18

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.78

1.2

V

0.66

Reverse Recovery Time

78

ns

Charge Time

36

Discharge Time

42

Reverse Recovery Charge

105

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.