NVMJS1D7N04C

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

21

mV/°C

Zero Gate Voltage Drain Current

10

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

2.5

3.5

V

Threshold Temperature Coefficient

−7.8

mV/°C

Drain−to−Source On Resistance

1.36

1.7

mW

Forward Transconductance

130

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

3300

pF

Output Capacitance

1600

Reverse Transfer Capacitance

45

Total Gate Charge

47

nC

Threshold Gate Charge

10

Gate−to−Source Charge

16

Gate−to−Drain Charge

7.0

Plateau Voltage

4.7

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

13

ns

Rise Time

48

Turn−Off Delay Time

29

Fall Time

8.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.83

1.2

V

0.7

Reverse Recovery Time

57

ns

Charge Time

30

Discharge Time

27

Reverse Recovery Charge

68

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.