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QPD1015LEVB2 데이터시트(PDF) 1 Page - Qorvo, Inc |
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QPD1015LEVB2 데이터시트(HTML) 1 Page - Qorvo, Inc |
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1 / 27 page ![]() QPD1015L 65W, 50V, DC – 3.7 GHz, GaN RF Transistor Rev. C - 1 of 27 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Product Features • Frequency: DC to 3.7 GHz • Output Power (P3dB)1: 70 W • Linear Gain1: 20 dB • Typical PAE3dB1: 74% • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable Note: 1 @ 2 GHz General Description The QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Applications • Military radar • Civilian radar • Land mobile and military radio communications • Test instrumenation • Wideband or narrowband amplifiers • Jammers • Avionics Ordering info Part No. ECCN Description QPD1015L EAR99 DC – 3.7 GHz 65W RF Transistor QPD1015LPCB401 EAR99 0.96 – 1.215 GHz EVB QPD1015LEVB2 EAR99 3.0 – 3.5 GHz EVB |
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