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ACE8204TL 데이터시트(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE8204TL 데이터시트(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 7 page ![]() ACE8204TL Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 3 Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient . 4. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Typical Performance Characteristics |
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