ACE112003B datasheet(1/3 Pages) ACE

부품명	ACE112003B

상세설명	Dual N-Channel Enhancement Mode Power MOSFET

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제조업체	ACE [ACE Technology Co., LTD.]

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ACE112003B

Dual N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE112003B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. It can be used in a load switch or battery protection applications.

Features

⚫

VDS=24V

⚫

ID=10A

⚫

RDS(ON)1@VGS = 4.5V, ≤ 7.9mΩ

⚫

RDS(ON)2@VGS = 4.0V, ≤ 8.1mΩ

⚫

RDS(ON)1@VGS = 3.8V, ≤ 8.2mΩ

⚫

RDS(ON)2@VGS = 3.1V, ≤ 9.2mΩ

⚫

RDS(ON)2@VGS = 2.5V, ≤ 10.5mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

24

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)*AC

TA=25℃

ID

10

A

TA=700℃

7.6

Drain Current (Pulsed)*B

IDM

50

A

Power Dissipation

TA=25℃

PD

1.5

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

°C

Junction-to-Ambient Thermal Resistance

RθJA

83

°C /W

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rati

ng is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typ

Unit

Drain-Source Voltage

VDS

24

V

유사한 부품 번호 - ACE112003B

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유사한 설명 - ACE112003B

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ACE112003B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

ACE112003B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD.

유사한 부품 번호 - ACE112003B

유사한 설명 - ACE112003B

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