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ACE122004KC 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE122004KC 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 3 page ![]() ACE122004KC Dual N-Channel Plastic-Encapsulate MOSFETS VER 1.1 1 Description The ACE122004KC uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Features ⚫ V(BR)DSS=20V ⚫ ID=10A ⚫ RDS(ON)@VGS=4.5V, Typ7.3mΩ ⚫ RDS(ON)@VGS=4.0V, Typ7.6mΩ ⚫ RDS(ON)@VGS=3.8V, Typ7.8mΩ ⚫ RDS(ON)@VGS=3.1V, Typ8.2mΩ ⚫ RDS(ON)@VGS=2.5V, Typ9.0mΩ Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 10 A Pulsed Drain Current IDM 50 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~150 ℃ Lead Temperature for Soldering Purposes (1/8’’ from case for 10 s) TL 260 ℃ |
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