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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ACE13818B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE13818B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 2 page  ACE13818B Dual N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ⚫ Motor Control ⚫ Portable Equipment Features ⚫ VDS (V) = 30V ⚫ ID = 8A ⚫ RDS(ON)@VGS = 10V, TYP 7mΩ ⚫ RDS(ON)@VGS = 4.5V, TYP 10mΩ Absolute Maximum Ratings@TA=25℃ unless otherwise noted Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 8 A TA=100℃ 7.2 Drain Current (Pulsed)*B IDM 25 A Power Dissipation TA=25℃ PD 21 W Operating temperature / Storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Pulse width limited by max, junction temperature. C: The current rating is bas ed on the t≤ 10s junction to ambient thermal resistance rating Ordering information ACE13818B XX + H PD：PDFN3*3-8L Pb - free Halogen - free |
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