4606 datasheet(1/8 Pages) TUOFENG

부품명	4606

상세설명	N and P-Channel Enhancement Mode Power MOSFET

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제조업체	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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N and P-Channel Enhancement Mode Power MOSFET

Description

The 4606 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 30V,ID =6.9A

RDS(ON) < 21mΩ @ VGS=10V

● P-Channel

VDS = -30V,ID = -6.0A

RDS(ON) < 45mΩ @ VGS=-10V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Schematic diagram

Marking and pin assignment

SOP-8

top view

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

V

TA=25℃

6.9

-6.0

Continuous Drain Current

ID

A

Pulsed Drain Current

(Note 1)

IDM

28

-26

A

Maximum Power Dissipation

TA=25℃

PD

2.0

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

N-Ch

63.5

/W

℃

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

P-Ch

63.5

/W

℃

N-channel

P-channel

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4606

RDS(ON) < 32mΩ @ VGS=4.5V

RDS(ON) < 60mΩ @ VGS=-4.5V

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4606 데이터시트(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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