4616 datasheet(1/10 Pages) TUOFENG

부품명	4616

상세설명	N and P-Channel Enhancement Mode Power MOSFET

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제조업체	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

홈페이지	http://www.sztuofeng.com/?lang=en

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N and P-Channel Enhancement Mode Power MOSFET

Description

The 4616 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 30V,ID =8.0A

RDS(ON) < 19mΩ @ VGS=10V

● P-Channel

VDS = -30V,ID = -7.0A

RDS(ON) < 29mΩ @ VGS=-10V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

V

TA=25℃

8.0

-7.0

Continuous Drain Current

ID

A

Pulsed Drain Current

(Note 1)

IDM

30

-30

A

Maximum Power Dissipation

TA=25℃

PD

2.0

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

N-Ch

62.5

/W

℃

Thermal Resistance,Junction-to-Ambient

(Note2)

RθJA

P-Ch

62.5

/W

℃

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4616

RDS(ON) < 25mΩ @ VGS=4.5V

RDS(ON) < 38mΩ @ VGS=-4.5V

www.sztuofeng.com

N-channel

P-channel

Equivalent Cir cuit

MARKING

4616

o

TFCYWP

Y :year code W :week code

SOP-8

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4616 데이터시트(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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