| 전자부품 데이터시트 검색엔진 |
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4803B 데이터시트(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4803B 데이터시트(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page ![]() Page v1.0 1 P-Channel Enhancement Mode Power MOSFET Description The 4803B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features VDS = -30V,ID = - 5.0A RDS(ON) < 50mΩ @ VGS= -10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS RDS(ON) < 60mΩ @ VGS= -4.5V www.sztuofeng.com 4803B Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 48 62.5 74 110 RθJL 35 40 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±25 Gate-Source Voltage Drain-Source Voltage -30 Continuous Drain Current A Maximum Units Parameter TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V -18 Pulsed Drain CurrentB Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 1.8 1.2 -55 to 150 TA=70°C ID - 5 G1 D1 S1 G2 D2 S2 SOP-8 Equivalent Cir cuit MARKING 4803B o TFCYWP Y :year code W :week code |
유사한 부품 번호 - 4803B |
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유사한 설명 - 4803B |
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