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8810 데이터시트(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

부품명 8810
상세설명  Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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제조업체  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
홈페이지  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

8810 데이터시트(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  8810 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 8810 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 8810 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 8810 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Symbol
Min
Typ
Max
Units
BVDSS
20
V
100
±10
A
VGS(th)
0.5
0.6
1
V
ID(ON)
30
A
m
Ω
gFS
29
S
VSD
IS
2.5
A
Ciss
1160
pF
Coss
187
pF
Crss
146
pF
Rg
1.5
Ω
Qg
16
nC
Qgs
0.8
nC
Qgd
3.8
nC
tD(on)
6.2
ns
tr
12.7
ns
tD(off)
51.7
ns
tf
16
ns
trr
17.7
ns
Qrr
6.7
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6A
Reverse Transfer Capacitance
IF=6A, dI/dt=100A/µs
Electrical Characteristics (T =25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
VGS=2.5V, ID=5.5A
IS=1.5A,VGS =0V
VDS=5V, ID=6A
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.35Ω,
RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=6A
Gate Source Charge
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
15
13
19
17
V
1.2
u
n



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