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FDN338 데이터시트(PDF) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

부품명 FDN338
상세설명  P-Channel 20-V(D-S) MOSFET
PDF  5 Pages
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제조업체  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
홈페이지  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

FDN338 데이터시트(HTML) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

  FDN338 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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0
2
4
6
8
0
1
2
3
4
5
Q , GATE CHARGE (nC)
g
V
= -5V
DS
I = -1.6A
D
-15V
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.05
0.1
0.5
1
2
5
10
- V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
A
DC
DS
1s
100ms
10ms
1ms
10s
V
= -4.5V
SINGLE PULSE
R
=250°C/W
T
= 25°C
θJA
GS
A
0.0001
0.001
0.01
0.1
1
10
100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=250° C/W
T = 25°C
θJA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
R
(t) = r(t) * R
R
= 250 °C/W
Duty Cycle, D = t /t
1
2
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve.
0.1
0.2
0.5
1
2
5
10
20
20
50
100
200
400
600
1000
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
FDN338
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
4
,2018 V1.0
Apr



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