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TF3406 데이터시트(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

부품명 TF3406
상세설명  N-Channel 30-V(D-S) MOSFET
PDF  5 Pages
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제조업체  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
홈페이지  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF3406 데이터시트(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF3406 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF3406 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF3406 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF3406 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF3406 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
100
nA
VGS(th)
1
1.9
3
V
ID(ON)
15
A
50
65
75
105
m
Ω
gFS
7S
VSD
0.79
1
V
IS
2.5
A
Ciss
288
375
pF
Coss
57
pF
Crss
39
pF
Rg
36
Ω
Qg(10V)
6.5
8.5
nC
Qg(4.5V)
3.1
4
nC
Qgs
1.2
nC
Qgd
1.6
nC
tD(on)
4.6
ns
tr
1.9
ns
tD(off)
20.1
ns
tf
2.6
ns
trr
10.2
14
ns
Qrr
3.5
nC
Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=3.6A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VDS=5V, ID=3.6A
VGS=10V, VDS=5V
VGS=10V, ID=3.6A
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=24V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
VGS=4.5V, ID=2.8A
IS=1A
Turn-On Rise Time
Gate resistance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate Drain Charge
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=3.6A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
Gate Source Charge
Turn-On DelayTime
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3406
www.sztuofeng.com
Feb,2018 V1.0
2



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