TF3410 datasheet(2/6 Pages) TUOFENG

2 / 6 page

www.sztuofeng.com

Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max Units

Static

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID = 250µA

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID = 250µA

0.5

0.8

1.0

Gate-source leakage

IGSS

VDS =0V, VGS =±12V

±100

Zero gate voltage drain current

IDSS

VDS =24V, VGS =0V

100

Drain-source on-state resistance a

RDS(on)

VGS =4.5V, ID =5A

0. 26

0.033

Ω

VGS =2.5V, ID =4A

0.035

0.042

Forward transconductance a

gfs

VDS =5V, ID =5A

Dynamicb

Input capacitance

Ciss

825

VDS =15V,VGS =0V,f =1MHz

Output capacitance

Coss

100

Reverse transfer capacitance

Crss

Total gate charge

VDS =10V,VGS =4.5V ,ID =5.8A

Gate-source charge

Gate-drain charge

Turn-on delay time

td(on)

VDD=15V,RL =2.7

3.3

Rise time

4.8

VGS=10V ,Rgen =3Ω

Turn-off delay time

td(off)

26.0

Fall time

4.0

Drain-source body diode characteristics

Continuous source-drain diode current

TC=25

℃

2.5

Body diode voltage

VSD

IS=1.0A

0.7

1.0

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

Qgs

Qgd

1 6

3.1

VGS =10V, ID =5.8A

0.023

0.028

3 0

TF 41

Ω

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