MP4T80100 datasheet(2/3 Pages) MPLUSE

2 / 3 page

8 Volt, Mediam Power Transistor

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

576 Charcot Avenue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

MP4T801 Series

Electrical Specifications at 25

°C

Symbol

Parameters

Test

Conditions

Units

MP4T80100

Chip

MP4T801510

200mil BEO

Gain Bandwidth

Product

VCE = 8V

IC = 100

GHz

6 typ.

4 Typ

P out

Power Output

Class C

VCE = 8V

IC = 220

f = .9 GHz

.5 typ.

Maximum Ratings at 25

°C

Parameter

Symbol

Maximum Rating

Collector Base Voltage

VCBO

25 V

Collector-Emitter Voltage

VCEO

12 V

Emitter-Base Voltage

VEBO

1.5 V

Collector Current

300 mA

Junction Temperature

200

°C

Storage Temperature

Chips or Ceramic Packages

TSTG

-65

°C to +200°C

Plastic Packages

-65

°C to +125°C

Power Dissipation

3.6W

Electrical Specifications at 25

°C

Parameters

Conditions

Symbol

Min.

Typ.

Max.

Units

Collector Cut-off Current

VCB = 8 V

IE = 0

ICBO



100

Emitter Cut-off Current

VEB = 1 V

IC = 0

IEBO



µA

Forward Current Gain

VCE = 8 V

IC = 100 mA

hFE

100

200



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