MCP14A0052 datasheet(3/24 Pages) MICROCHIP

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DS20005369B-page 3

MCP14A0051/2

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

VDD, Supply Voltage..................................................................................................................................................+20V

VIN, Input Voltage............................................................................................................... (VDD + 0.3V) to (GND – 0.3V)

VEN, Enable Voltage .......................................................................................................... (VDD + 0.3V) to (GND – 0.3V)

Package Power Dissipation (TA =+50°C)

6-Lead SOT-23 .................................................................................................................................................0.52 W

6-Lead 2x2 DFN................................................................................................................................................1.09 W

ESD Protection on All Pins.........................................................................................................................1.75 kV (HBM)

.............................................................................................................................. 100V (MM)

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions

for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V  VDD  18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input

Input Voltage Range

VIN

GND – 0.3V

—

VDD +0.3

Logic ‘1’ High Input Voltage

VIH

2.0

1.6

—

Logic ‘0’ Low Input Voltage

VIL

—1.2

0.8

Input Voltage Hysteresis

VHYST(IN)

—0.4

—

Input Current

IIN

-1

—

µA

 VIN  VDD

Enable

Enable Voltage Range

VEN

GND – 0.3V

—

VDD +0.3

Logic ‘1’ High Enable Voltage

VEH

2.0

1.6

—

Logic ‘0’ Low Enable Voltage

VEL

—1.2

0.8

Enable Voltage Hysteresis

VHYST(EN)

—0.4

—

Enable Pin Pull-up Resistance

RENBL

—1.8

—

MΩ

VDD =18V, ENB= AGND

Enable Input Current

IEN

—10

—

µA

VDD =18V, ENB= AGND

Propagation Delay

tD3

—35

VDD =18V, VEN =5V,

see Figure 4-3 (Note 1)

Propagation Delay

tD4

—23

VDD =18V, VEN =5V,

see Figure 4-3 (Note 1)

Output

High Output Voltage

VOH

VDD – 0.025

—

IOUT =0A

Low Output Voltage

VOL

——

0.025

IOUT =0A

Output Resistance, High

ROH

—12.5

IOUT =10 mA, VDD =18V

Output Resistance, Low

ROL

—7.5

IOUT =10 mA, VDD =18V

Peak Output Current

IPK

—0.5

—

VDD =18V (Note 1)

Latch-up Protection Withstand

Reverse Current

IREV

0.5

—

Duty cycle

 2%, t  300 µs

(Note 1)

Note 1:

Tested during characterization, not production tested.

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