AM6512 datasheet(3/11 Pages) AITSEMI

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AiT Semiconductor Inc.

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AM6512

MOSFET

N-CHANNEL ENHANCEMENT MODE

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless Otherwise Noted

VDSS, Drain-Source Voltage

30V

VGSS, Gate-Source Voltage

±20V

TJ, Maximum Junction Temperature

150°C

TSTG, Storage Temperature Range

-55°C~150°C

IS, Diode Continuous Forward Current

TC=25°C

42.5A

IDNOTE1, Continuous Drain Current

TC=25°C

80*A

TC=100°C

75A

IDMNOTE2, Pulsed Drain Current

TC=25°C

160A

PD, Maximum Power Dissipation

TC=25°C

78W

TC=100°C

31W

RθJC, Thermal Resistance-Junction to Case

Steady State

1.6°C/W

IDNOTE3, Continuous Drain Current

TA=25°C

28A

TA=70°C

22A

PDNOTE3, Maximum Power Dissipation

TA=25°C

2.3W

TA=70°C

1.5W

RθJANOTE3, Thermal Resistance-Junction to Ambient

t ≤10s

20°C/W

Steady State

55°C/W

IASNOTE4, Avalanche Current, Single Pulse

L=0.1mH

43A

EASNOTE4, Avalanche Energy, Single Pulse

L=0.1mH

92mJ

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

NOTE1,*: Max. continue current is limited by bonding wire.

NOTE2: Pulse width is limited by max. junction temperature.

NOTE3: RθJA steady state t=999s.

NOTE4: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).

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