AM6594 datasheet(3/8 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

AM6594

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

REV1.0

- FEB 2019 RELEASED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25℃, unless otherwise noted

VDSS, Drain-Source Voltage

30V

VGSS, Gate-Source Voltage

±20V

ID, Continuous Drain Current

TC=25°C

50A

TC=100°C

39.1A

IDM, Pulsed Drain CurrentNOTE1

124A

ID, Continuous Drain Current

TA=25°C

25.5A

TA=70°C

20.4A

PD, Power DissipationNOTE2

TA=25°C

6.3W

TA=70°C

IAS, Avalanche CurrentNOTE1

35A

EAS, Single Pulse Avalanche energy L=0.1mH NOTE1,6

61mJ

PD, Power DissipationNOTE3

TC=25°C

36.8W

TC=100°C

14.7W

TJ, Operation Junction Temperature

-55℃~+150℃

TSTG, Storage Temperature Range

-55℃~+150℃

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

Parameter

Symbol

Typ.

Max.

Units

Thermal Resistance Junction to AmbientNOTE2

t≦10s

RθJA

°C/W

Thermal Resistance Junction to AmbientNOTE2,4 Steady-State

Thermal Resistance Junction to Case

Steady-State

RθJC

3.4

NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C.

NOTE2: Measure the value in a still air environment at TA=25°C, using an installation mounted on a 1 in2 FR-4 board, maximum junction

temperature TJ(MAX)=150°C.

NOTE3: Using junction-to-case thermal resistance, dissipation limit in the case of additional heat.

NOTE4: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.

NOTE5: The pulse test width is ≤300μs and the duty cycle ≦ 2%.

NOTE6: The EAS data shows Maximum, tested and pulse width limited by maximum.

NOTE7: * . The maximum rating current is limited by wire bonding.

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