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DS312W 데이터시트(PDF) 2 Page - AiT Semiconductor Inc.

부품명 DS312W
상세설명  SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A
PDF  5 Pages
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제조업체  AITSEMI [AiT Semiconductor Inc.]
홈페이지  https://ait-ic.com/
Logo AITSEMI - AiT Semiconductor Inc.

DS312W 데이터시트(HTML) 2 Page - AiT Semiconductor Inc.

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AiT Semiconductor Inc.
www.ait-ic.com
DS32W~DS320W
SCHOTTKY BARRIER RECTIFIER
REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A
REV1.0
- MAR 2015 RELEASED -
- 2 -
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or
inductive load, for capacitive load, derate by 20 %
Parameter
Symbol DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W
Unit
Maximum Repetitive Peak
Reverse Voltage
VRRM
20
40
60
80
100
120
150
200
V
Maximum RMS Voltage
VRMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking
Voltage
VDC
20
40
60
80
100
120
150
200
V
Maximum Average Forward
Rectified Current
IF(AV)
3.0
A
Peak Forward Surge Current
8.3ms Single Half Sine
Wave Superimposed on
Rated Load (JEDEC
Method)
IFSM
80
70
A
Max Instantaneous Forward
Voltage at 3A
VF
0.55
0.70
0.85
0.95
V
Maximum DC
Reverse Current
at Rated DC
Blocking Voltage
TA=25°C
TA=100°C
IR
0.5
10
0.3
5
mA
Typical Junction
CapacitanceNOTE1
CJ
250
160
pF
Typical Thermal
ResistanceNOTE2
RθJA
65
°C/W
Operating Junction
Temperature Range
TJ
-55 ~ +125
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
NOTE1: Measured at 1MHz and applied reverse voltage of 4V D.C.
NOTE2: P.C.B. mounted with 0.2 x 0.2" (5 x 5 mm) copper pad areas.



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